Today, let's discuss the principle of ICP-RIE etching:
ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etching) is a dry etching process that combines ICP with RIE technology. This technique introduces specific gases such as SF6, CF4, etc., and uses a radio frequency (RF) power supply (usually 13.56 MHz) to excite the gas around a conductor coil, generating an oscillating electromagnetic field. This electromagnetic field transfers energy to the gas in the reaction chamber through inductive coupling, causing electrons in the gas molecules to be excited and detached from atoms, forming free electrons and positive ions. These free electrons continue to gain energy in the electromagnetic field and collide with more gas molecules, causing more electrons to detach, ultimately forming a high-density plasma.
Next, we will learn about the two steps of ICP-RIE etching.
