Today, we continue to introduce a commonly used combination etching method in dry etching: ICP-RIE dry etching.
ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etching) is an advanced dry etching technology that combines ICP technology with Reactive Ion Etching (RIE). This technique leverages the high-density plasma provided by ICP and the anisotropic etching characteristics of RIE, aiming to offer high etching rates, high selectivity, and low damage processing. As the plasma can be maintained at low pressure, it also provides excellent profile control, which is crucial for precise microelectronics manufacturing.
In the next article, we will introduce the principles of ICP-RIE etching.
